PMDXB600UNE
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PMDXB600UNE
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商品编号:
PMDXB600UNEZ
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简述:
20 V, dual N-channel Trench MOSFET
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描述:
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 数据手册:
库存: 98289999
特性
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ
目标应用
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
数据手册
