PMDPB95XNE2
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PMDPB95XNE2
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商品编号:
PMDPB95XNE2X
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简述:
30 V, dual N-channel Trench MOSFET
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描述:
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 数据手册:
库存: 99999999
特性
Very fast switching
Trench MOSFET technology
Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm
Exposed drain pad for excellent thermal conduction
EletroStatic Discharge (ESD) protection > 2 kV HBM
目标应用
Charging switch for portable devices
DC-to-DC converters
Small brushless DC motor drive
Power management in battery-driven portables
Hard disk and computing power management
数据手册