20 V dual P
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20 V dual P
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商品编号:
PMDPB58UPE,115
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简述:
channel Trench MOSFET
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描述:
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 数据手册:
库存: 282000
特性
Low threshold voltage
Very fast switching
Trench MOSFET technology
2 kV ElectroStatic Discharge (ESD) protection
目标应用
Relay driver
High-speed line driver
High-side load switch
Switching circuits
数据手册
