PMCXB900UE
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PMCXB900UE
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商品编号:
PMCXB900UEZ
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简述:
20 V, complementary N/P-channel Trench MOSFET
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描述:
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 数据手册:
库存: 99734999
特性
Trench MOSFET technology
Very low threshold voltage for portable applications: VGS(th) = 0.7 V
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
目标应用
Relay driver
High-speed line driver
Level shifter
Power management in battery-driven portables
数据手册
