PMBTA56

PMBTA56

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PMBTA56

商品编号:
PMBTA56-QR
简述:
Q - PNP general purpose transistor
描述:
PNP high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PMBTA06-Q
数据手册:
下载数据手册

库存: 99999999

数量:

单价: ¥0.1204

总价: ¥0.1204

价格（包含13%的增值税）

High current (max. 500 mA)
Low voltage (max. 80 V)
Qualified according to AEC-Q101 and recommended for use in automotive applications

General purpose switching and amplification, e.g. telephony and professional communication equipment

数据手册

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

600 V, 30 A trench field-stop IGBT with full rated silicon diode

650 V, 10 A SiC Schottky diode in TO-220-2 R2P