PMBTA06

PMBTA06

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PMBTA06

商品编号:
PMBTA06-QVL
简述:
Q - NPN general purpose transistor
描述:
NPN general-purpose transistor encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package.
PNP complement: PMBTA56-Q
数据手册:
下载数据手册

库存: 0

数量:

单价: ¥0.1342

总价: ¥0.1342

价格（包含13%的增值税）

High current (max. 500 mA)
Low voltage (max. 80 V)
Qualified according to AEC-Q101 and recommended for use in automotive applications

General purpose switching and amplification in e.g. telephony and professional communication equipment.

数据手册

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

600 V, 30 A trench field-stop IGBT with full rated silicon diode

650 V, 10 A SiC Schottky diode in TO-220-2 R2P