PMBT5551

PMBT5551

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PMBT5551

商品编号:
PMBT5551-QR
简述:
Q - NPN high-voltage transistor
描述:
NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
数据手册:
下载数据手册

库存: 0

数量:

单价: ¥0.1964

总价: ¥0.1964

价格（包含13%的增值税）

数量单价总价: 1 ¥0.1964 ¥0.1964; 500 ¥0.1786 ¥89.3000; 1000 ¥0.1701 ¥170.1000; 3000 ¥0.162 ¥486.0000

Low current (max. 300 mA)
High voltage (max. 160 V)
Qualified according to AEC-Q101 and recommended for use in automotive applications

数据手册

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

600 V, 30 A trench field-stop IGBT with full rated silicon diode

650 V, 10 A SiC Schottky diode in TO-220-2 R2P