PMBD353

PMBD353

图像仅供参考

请参阅产品规格

PMBD353

库存: 2000

数量:

单价: ¥0.4723

总价: ¥0.4723

价格（包含13%的增值税）

数量单价总价: 1 ¥0.4723 ¥0.4723; 500 ¥0.4293 ¥214.6500; 1000 ¥0.4089 ¥408.9000; 3000 ¥0.3894 ¥1,168.2000

数据手册

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

600 V, 30 A trench field-stop IGBT with full rated silicon diode

650 V, 10 A SiC Schottky diode in TO-220-2 R2P