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暂无BOM订单
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PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
NPN complement: PHPT61010NY.
650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
600 V, 30 A trench field-stop IGBT with full rated silicon diode
650 V, 10 A SiC Schottky diode in TO-220-2 R2P
