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特性

  • Bidirectional ESD protection of one line

  • VRWM = 4 V device

  • Very low diode capacitance Cd = 0.7 pF typical

  • Extremely low clamping and trigger voltage (6.7 V TLP) to protect sensitive I/Os

  • Extremely low inductance protection path to ground

  • ESD protection up to ±30 kV according to IEC 61000-4-2

  • IEC 61000-4-5 (surge): IPP = 25 A peak pulse (average measured)

  • Ultra small, very low inductance SMD package

  • Exceeds IEC 61000-4-4 level 4 for I/O data lines, meets IEC 61000-4-4 level 4 for power supply ports (corresponds to 80 A into a 50 Ohm termination)

目标应用

  • Cellular handsets and accessories

  • Portable electronics

  • Communication systems

  • Computers and peripherals

  • USB3.2 and USB2.0 data lines, SD-card data lines