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特性

  • Bidirectional ESD protection of one line

  • ESD protection up to ±14 kV contact discharge according to IEC 61000-4-2

  • Backwards compatible to USB3.2 due to VRWM = 2.8 V

  • Extremely low diode capacitance: Cd = 0.16 pF at 1 MHz

  • Extremely low clamping and trigger voltage (Vt1 = 6.9 V TLP) to protect sensitive transceivers
  • Extremely low insertion loss: -0.29 dB at 10 GHz

  • Extremely low return loss: -20.6 dB at 10 GHz

  • RF performance does not degrade over the operation voltage range

  • Extremely low leakage current: < 1 nA at 2.8 V

  • Extremely low inductance protection path to ground

  • Very high surge robustness: 5.5 A for a 8/20 µs pulse

  • IEC 61000-4-4 robust up to level 3 on I/O ports (corresponds to 40 A into a 50 Ohm termination)

  • Ultra-small SMD package

目标应用

  • Cellular handsets and accessories

  • Portable electronics

  • Communication systems

  • Computers and peripherals

  • USB4, USB3.2 and Thunderbolt 3 and 4 data lines