PDTC123EMB

PDTC123EMB

图像仅供参考

请参阅产品规格

PDTC123EMB

库存: 0

数量:

单价: ¥0.2211

总价: ¥0.2211

价格（包含13%的增值税）

数量单价总价: 1 ¥0.2211 ¥0.2211; 500 ¥0.201 ¥100.5000; 1000 ¥0.1914 ¥191.4000; 3000 ¥0.1823 ¥546.9000

数据手册

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

600 V, 30 A trench field-stop IGBT with full rated silicon diode

650 V, 10 A SiC Schottky diode in TO-220-2 R2P