PBSS4350T
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PBSS4350T
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商品编号:
PBSS4350T-QR
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简述:
Q - 50 V; 3 A NPN low VCEsat transistor
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描述:
NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5350T-Q
- 数据手册:
库存: 0
特性
Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
High collector current capability
High collector current gain
Improved efficiency due to reduced heat generation.
Qualified according to AEC-Q101 and recommended for use in automotive applications
目标应用
Power management applications
Low and medium power DC/DC converters
Supply line switching
Battery chargers
Linear voltage regulation with low voltage drop-out (LDO).
数据手册
