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请参阅产品规格
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商品编号:
PBSS4260PANPSX
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简述:
60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor
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描述:
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NPN/NPN complement: PBSS4260PANS
PNP/PNP complement: PBSS5260PAPS
- 数据手册:
特性
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
Exposed heat sink for excellent thermal and electrical conductivity
High energy efficiency due to less heat generation
Suitable for Automatic Optical Inspection (AOI) of solder joints
AEC-Q101 qualified
目标应用
Load switch
Battery-driven devices
Power management
Charging circuits
LED lighting
Power switches (e.g. motors, fans)
