PBSS4032NX
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PBSS4032NX
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商品编号:
PBSS4032NX,115
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简述:
30 V, 4.7 A NPN low VCEsat transistor
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描述:
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PX.
- 数据手册:
库存: 0
特性
Very low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
目标应用
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
数据手册
