PBSS306NX
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PBSS306NX
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商品编号:
PBSS306NX,115
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批次:
2347+
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简述:
100 V, 4.5 A NPN low VCEsat transistor
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描述:
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS306PX.
- 数据手册:
库存: 99969999
特性
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
AEC-Q101 qualified
目标应用
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
数据手册
