PBRN113ZT
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PBRN113ZT
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商品编号:
PBRN113ZT-QR
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简述:
Q - 40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ
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描述:
NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBRP113ZT-Q
- 数据手册:
库存: 2442000
特性
600 mA output current capability
Low collector-emitter saturation voltage VCEsat
High current gain hFE
Reduces component count
Built-in bias resistors
Reduces pick and place costs
Simplifies circuit design
± 10 % resistor ratio tolerance
Qualified according to AEC-Q101 and recommended for use in automotive applications
目标应用
Digital application in automotive and industrial segments
Switching loads
Medium current peripheral driver
数据手册
