NS50T07Y1M7PZ
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NS50T07Y1M7PZ
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商品编号:
NS50T07Y1M7PZ
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简述:
650 V, 50 A Three-phase Full-bridge IGBT Power Module
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描述:
The NS50T07Y1M7P is an insulated-gate bipolar transistor (IGBT) power module. The module uses 7th-generation carrier stored trench-gate and field-stop (FS) technology. It is designed for high-voltage industrial applications, including power inverters and motor drives.
- 数据手册:
库存: 0
特性
- Three-phase full-bridge topology with an NTC temperature sensor
- Rated voltage and current: 650 V/50 A
- Maximum junction temperature: 175 °C
- Short-circuit withstand time: 5 µs
- Solderable contacts
- Pre-applied thermal interface material
- Optimized design for low parasitic inductance
- Low collector-emitter saturation voltage
- Low switching losses
- Validated with enhanced 2000-hour HTRB and HV-H3TRB qualification testing
目标应用
- Motor drives
- Servo drives
- Air conditioning systems
- Renewable energy systems
- Uninterruptible power supply (UPS) inverters
数据手册