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商品编号:
NGW40T60H3DFQ
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简述:
IGBT with trench construction, fast recovery diode
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描述:
The NGW40T60H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T60H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 600 V, 40 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
- 数据手册:
特性
Collector current (IC) rated at 40 A
Low conduction and switching losses
Stable and tight parameters for easy parallel operation
Maximum junction temperature of 175 °C
Fully rated as a soft fast reverse recovery diode
RoHS compliant, lead-free plating
目标应用
Power inverters
Uninterruptible Power Supply (UPS) inverter
Photovoltaic (PV) strings
EV charging
Induction heating
Welding
