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请参阅产品规格
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商品编号:
BUK9Y104-100B,115
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简述:
channel TrenchMOS logic level FET
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描述:
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
- 数据手册:
库存: 99999999
特性
Low conduction losses due to low on-state resistance
Q101 compliant
Suitable for logic level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
目标应用
12 V, 24 V and 42 V loads
Automotive systems
DC-to-DC converters
General purpose power switching
Solenoid drivers
数据手册
