• 在线客服
  • 我的收藏
  • 免费注册
  • 中文
切换导航
购物车
BOM管理
搜索
高级搜索
  • 比较产品
菜单
账户
BOM配单 新品推荐 样品申请 折扣专区 停产产品 汽车应用
BUK6D120
main product photo

图像仅供参考

请参阅产品规格

BUK6D120
  • 商品编号:
    BUK6D120-60PZ
  • 简述:
    60P - 60 V, P-channel Trench MOSFET
  • 描述:

    P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

  • 数据手册:
    下载数据手册
库存: 99981999
数量:
单价: ¥1.0068
总价: ¥1.0068
价格（包含13%的增值税）
数量 单价 总价
1 ¥1.0068 ¥1.0068
500 ¥0.9152 ¥457.6000
1000 ¥0.8717 ¥871.7000
3000 ¥0.8301 ¥2,490.3000

特性

  • Extended temperature range Tj = 175 ℃

  • Side wettable flanks for optical solder inspection

  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

  • Trench MOSFET technology

  • AEC-Q101 qualified

目标应用

  • Relay driver

  • High-speed line driver

  • High-side load switch

  • Switching circuits

数据手册
下载数据手册

推荐产品

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

¥57.7437
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

¥98.3146
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

¥28.1205
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

¥19.2121
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

¥12.2357
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

¥11.4843
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode

¥14.1836
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P

¥10.1964