BST60

BST60

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BST60

商品编号:
BST60-QX
简述:
Q - PNP Darlington transistor
描述:
PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: BST50-Q
数据手册:
下载数据手册

库存: 0

数量:

单价: ¥1.0229

总价: ¥1.0229

价格（包含13%的增值税）

数量单价总价: 1 ¥1.0229 ¥1.0229; 500 ¥0.9299 ¥464.9500; 1000 ¥0.8856 ¥885.6000; 3000 ¥0.8434 ¥2,530.2000

Integrated diode and resistor
Qualified according to AEC-Q101 and recommended for use in automotive applications

Industrial switching applications such as:
- Print hammer
- Solenoid
- Relay and lamp driving

数据手册

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

600 V, 30 A trench field-stop IGBT with full rated silicon diode

650 V, 10 A SiC Schottky diode in TO-220-2 R2P