BST39

BST39

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BST39

商品编号:
BST39-QX
简述:
Q - NPN high-voltage transistor
描述:
NPN high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.
数据手册:
下载数据手册

库存: 0

数量:

单价: ¥1.5209

总价: ¥1.5209

价格（包含13%的增值税）

数量单价总价: 1 ¥1.5209 ¥1.5209; 500 ¥1.3826 ¥691.3000; 1000 ¥1.3168 ¥1,316.8000; 3000 ¥1.2541 ¥3,762.3000

Low current (max. 100 mA)
High voltage (max. 350 V)
Qualified according to AEC-Q101 and recommended for use in automotive applications

数据手册

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

600 V, 30 A trench field-stop IGBT with full rated silicon diode

650 V, 10 A SiC Schottky diode in TO-220-2 R2P