BSS138PW

JavaScript 似乎在您的浏览器中被禁用。 为了您在我们网站能获得最好的体验，建议在浏览器中打开Javascript。

BOM配单新品推荐折扣专区停产产品汽车应用

跳到结尾的图片库

BSS138PW

main product photo

图像仅供参考

请参阅产品规格

BSS138PW

商品编号:
BSS138PW,115
简述:
60 V, 320 mA N-channel Trench MOSFET
描述:
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
数据手册:
下载数据手册

跳转到图像库的开头

库存: 99999999

数量:

单价: ¥0.1771

总价: ¥0.1771

价格（包含13%的增值税）

数量单价总价: 1 ¥0.1771 ¥0.1771; 500 ¥0.161 ¥80.5000; 1000 ¥0.1533 ¥153.3000; 3000 ¥0.146 ¥438.0000

特性

Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified

目标应用

Relay driver
High-speed line driver
Low-side load switch
Switching circuits

数据手册

下载数据手册

推荐产品

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode

PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P