BSH205G2
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BSH205G2
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商品编号:
BSH205G2VL
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简述:
20 V, P-channel Trench MOSFET
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描述:
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 数据手册:
库存: 99989999
特性
Low threshold voltage
Low on-state resistance
Trench MOSFET technology
Enhanced power dissipation capability of 890 mW
AEC-Q101 qualified
目标应用
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
数据手册
