BF820

BF820

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BF820

商品编号:
BF820-QR
简述:
Q - NPN high voltage transistor
描述:
NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.
PNP complement: BF821-Q
数据手册:
下载数据手册

库存: 0

数量:

单价: ¥0.2801

总价: ¥0.2801

价格（包含13%的增值税）

数量单价总价: 1 ¥0.2801 ¥0.2801; 500 ¥0.2547 ¥127.3500; 1000 ¥0.2425 ¥242.5000; 3000 ¥0.231 ¥693.0000

Low current (max. 50 mA)
High voltage (max. 300 V)
Qualified according to AEC-Q101 and recommended for use in automotive applications

数据手册

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

600 V, 30 A trench field-stop IGBT with full rated silicon diode

650 V, 10 A SiC Schottky diode in TO-220-2 R2P