20 V, 2 A NPN medium power transistor@en

图像仅供参考

请参阅产品规格

20 V, 2 A NPN medium power transistor@en

商品编号:
BCP68-25,115
简述:
us
描述:
NPN medium power transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BCP69.
数据手册:
下载数据手册

库存: 99809999

数量:

单价: ¥0.4422

总价: ¥0.4422

价格（包含13%的增值税）

数量单价总价: 1 ¥0.4422 ¥0.4422; 500 ¥0.402 ¥201.0000; 1000 ¥0.3829 ¥382.9000; 3000 ¥0.3646 ¥1,093.8000

数据手册

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

600 V, 30 A trench field-stop IGBT with full rated silicon diode

650 V, 10 A SiC Schottky diode in TO-220-2 R2P