• 在线客服
  • 我的收藏
  • 免费注册
  • 中文
切换导航
购物车
搜索
高级搜索
  • 比较产品
菜单
账户
BOM配单 新品推荐 折扣专区 停产产品 汽车应用
BAT760
main product photo

图像仅供参考

请参阅产品规格

BAT760
  • 商品编号:
    BAT760-QF
  • 简述:
    Q - Medium power Schottky barrier single diode
  • 描述:

    Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) Surface-Mounted Device SMD plastic package.

  • 数据手册:
    下载数据手册
库存: 0
数量:
单价: ¥0.2801
总价: ¥0.2801
价格（包含13%的增值税）
数量 单价 总价
1 ¥0.2801 ¥0.2801
500 ¥0.2547 ¥127.3500
1000 ¥0.2425 ¥242.5000
3000 ¥0.231 ¥693.0000

特性

  • Ultra high-speed switching

  • Very low forward voltage

  • Guard-ring protected

  • Very small SMD plastic package

  • Qualified according to AEC-Q101 and recommended for use in automotive applications

目标应用

  • Ultra high-speed switching

  • Voltage clamping

  • Protection circuits

数据手册
下载数据手册

推荐产品

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

¥57.7437
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

¥98.3146
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

¥28.1205
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

¥19.2121
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

¥12.2357
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

¥11.4843
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode

¥14.1836
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P

¥10.1964