BAS21H

BAS21H

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BAS21H

商品编号:
BAS21H,115
简述:
High-voltage switching diode
描述:
Single high-voltage switching diode, encapsulated in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package.
数据手册:
下载数据手册

库存: 98196999

数量:

单价: ¥0.1084

总价: ¥0.1084

价格（包含13%的增值税）

数量单价总价: 1 ¥0.1084 ¥0.1084; 500 ¥0.0985 ¥49.2500; 1000 ¥0.0939 ¥93.9000; 3000 ¥0.0894 ¥268.2000

数据手册

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

600 V, 30 A trench field-stop IGBT with full rated silicon diode

650 V, 10 A SiC Schottky diode in TO-220-2 R2P