BAS116H

BAS116H

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BAS116H

商品编号:
BAS116H,115
简述:
Low leakage switching diode
描述:
Low leakage switching diode, encapsulated in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package.
数据手册:
下载数据手册

库存: 0

数量:

单价: ¥0.234

总价: ¥0.234

价格（包含13%的增值税）

数量单价总价: 1 ¥0.234 ¥0.234; 500 ¥0.2127 ¥106.3500; 1000 ¥0.2026 ¥202.6000; 3000 ¥0.1929 ¥578.7000

数据手册

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650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

600 V, 30 A trench field-stop IGBT with full rated silicon diode

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