BAS116H

BAS116H

图像仅供参考

请参阅产品规格

BAS116H

商品编号:
BAS116H,115
简述:
Low leakage switching diode
描述:
Low leakage switching diode, encapsulated in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package.
数据手册:
下载数据手册

库存: 4206000

数量:

单价: ¥0.2101

总价: ¥0.2101

价格（包含13%的增值税）

数量单价总价: 1 ¥0.2101 ¥0.2101; 500 ¥0.191 ¥95.5000; 1000 ¥0.1823 ¥182.3000; 3000 ¥0.1736 ¥520.8000

数据手册

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

600 V, 30 A trench field-stop IGBT with full rated silicon diode

650 V, 10 A SiC Schottky diode in TO-220-2 R2P