2N7002H

2N7002H

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2N7002H

商品编号:
2N7002HR
简述:
channel Trench MOSFET
描述:
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
数据手册:
下载数据手册

库存: 1371000

数量:

单价: ¥0.1928

总价: ¥0.1928

价格（包含13%的增值税）

数量单价总价: 1 ¥0.1928 ¥0.1928; 500 ¥0.1752 ¥87.6000; 1000 ¥0.1673 ¥167.3000; 3000 ¥0.1593 ¥477.9000

数据手册

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

600 V, 30 A trench field-stop IGBT with full rated silicon diode

650 V, 10 A SiC Schottky diode in TO-220-2 R2P