2N7002BK

2N7002BK

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2N7002BK

商品编号:
2N7002BKVL
简述:
channel Trench MOSFET
描述:
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) package using Trench MOSFET technology.
数据手册:
下载数据手册

库存: 89199999

数量:

单价: ¥0.1288

总价: ¥0.1288

价格（包含13%的增值税）

数量单价总价: 1 ¥0.1288 ¥0.1288; 500 ¥0.1171 ¥58.5500; 1000 ¥0.1115 ¥111.5000; 10000 ¥0.1062 ¥1,062.0000

数据手册

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

600 V, 30 A trench field-stop IGBT with full rated silicon diode

650 V, 10 A SiC Schottky diode in TO-220-2 R2P