The store will not work correctly when cookies are disabled.
折扣专区
- 产品
- 描述
- 价格
- 库存
- DC
- 数据手册
- 操作
-
MMBZ6V2AL-QR
Q - Low capacitance unidirectional double ESD protection diode
库存: 306000
1+: ¥0.2479
500+: ¥0.2254
1000+: ¥0.2147
3000+: ¥0.1118
1+: ¥0.2479
500+: ¥0.2254
1000+: ¥0.2147
3000+: ¥0.1118
306000
-
PMBT2222AMBYL
40 V, 600 mA NPN switching transistor
库存: 10000
1+: ¥0.2490
500+: ¥0.2264
1000+: ¥0.2156
3000+: ¥0.1126
1+: ¥0.2490
500+: ¥0.2264
1000+: ¥0.2156
3000+: ¥0.1126
0
-
PESD3V3HS2-SFYL
SF - Very low clamping bidirectional ESD protection diode
库存: 108000
1+: ¥0.2469
500+: ¥0.2244
1000+: ¥0.2137
3000+: ¥0.1110
1+: ¥0.2469
500+: ¥0.2244
1000+: ¥0.2137
3000+: ¥0.1110
108000
-
PMEG2010EA,135
20 V, 1 A low VF Schottky barrier diode
库存: 0
1+: ¥0.2501
500+: ¥0.2273
1000+: ¥0.2165
3000+: ¥0.1126
1+: ¥0.2501
500+: ¥0.2273
1000+: ¥0.2165
3000+: ¥0.1126
0
-
PMEG2010EAZ
20 V, 1 A low VF Schottky barrier diode
库存: 30000
1+: ¥0.2501
3000+: ¥0.1126
0
-
PMEG6010CEGWJ
60 V, 1 A Low VF Schottky barrier rectifier
库存: 0
1+: ¥0.2640
500+: ¥0.2400
1000+: ¥0.2286
1+: ¥0.2640
500+: ¥0.2400
1000+: ¥0.2286
0
-
PRMH13Z
50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET)
库存: 5000
1+: ¥0.2726
500+: ¥0.2478
1000+: ¥0.2360
3000+: ¥0.1223
1+: ¥0.2726
500+: ¥0.2478
1000+: ¥0.2360
3000+: ¥0.1223
0
-
PMH550UNEH
30 V, N-channel Trench MOSFET
库存: 10000
1+: ¥0.2737
500+: ¥0.2488
1000+: ¥0.2370
1+: ¥0.2737
500+: ¥0.2488
1000+: ¥0.2370
10000
-
PESD15VW1BCSFYL
Extremely low capacitance bidirectional ESD protection diode
库存: 9000
1+: ¥0.2683
500+: ¥0.2439
1000+: ¥0.2323
3000+: ¥0.1207
1+: ¥0.2683
500+: ¥0.2439
1000+: ¥0.2323
3000+: ¥0.1207
0
-
PMEG2010EA-QZ
Q - 20 V, 1 A low VF Schottky barrier diode
库存: 30000
1+: ¥0.2801
500+: ¥0.2547
1000+: ¥0.2425
3000+: ¥0.1263
1+: ¥0.2801
500+: ¥0.2547
1000+: ¥0.2425
3000+: ¥0.1263
0
-
PBSS4140T-QVL
Q - 40 V, 1 A NPN low VCEsat (BISS) transistor
库存: 0
1+: ¥0.2769
500+: ¥0.2517
1000+: ¥0.2398
3000+: ¥0.1247
1+: ¥0.2769
500+: ¥0.2517
1000+: ¥0.2398
3000+: ¥0.1247
0
-
PMH850UPEH
30 V, P-channel Trench MOSFET
库存: 120000
1+: ¥0.2812
500+: ¥0.2556
1000+: ¥0.2435
3000+: ¥0.1271
1+: ¥0.2812
500+: ¥0.2556
1000+: ¥0.2435
3000+: ¥0.1271
120000
MMBZ6V2AL-QRMMBZ6V2ALMMBZ6V2AL-QRQ - Low capacitance unidirectional double ESD protection diode库存: 3060001+: ¥0.2479500+: ¥0.22541000+: ¥0.21473000+: ¥0.11181+: ¥0.2479500+: ¥0.22541000+: ¥0.21473000+: ¥0.1118306000
PMBT2222AMBYLPMBT2222AMBPMBT2222AMBYL40 V, 600 mA NPN switching transistor库存: 100001+: ¥0.2490500+: ¥0.22641000+: ¥0.21563000+: ¥0.11261+: ¥0.2490500+: ¥0.22641000+: ¥0.21563000+: ¥0.11260
PESD3V3HS2-SFYLvp_PESD3V3HS2PESD3V3HS2-SFYLSF - Very low clamping bidirectional ESD protection diode库存: 1080001+: ¥0.2469500+: ¥0.22441000+: ¥0.21373000+: ¥0.11101+: ¥0.2469500+: ¥0.22441000+: ¥0.21373000+: ¥0.1110108000
PMEG2010EA,135PMEG2010EAPMEG2010EA,13520 V, 1 A low VF Schottky barrier diode库存: 01+: ¥0.2501500+: ¥0.22731000+: ¥0.21653000+: ¥0.11261+: ¥0.2501500+: ¥0.22731000+: ¥0.21653000+: ¥0.11260
PMEG6010CEGWJPMEG6010CEGWPMEG6010CEGWJ60 V, 1 A Low VF Schottky barrier rectifier库存: 01+: ¥0.2640500+: ¥0.24001000+: ¥0.22861+: ¥0.2640500+: ¥0.24001000+: ¥0.22860
PESD15VW1BCSFYLPESD15VW1BCSFPESD15VW1BCSFYLExtremely low capacitance bidirectional ESD protection diode库存: 90001+: ¥0.2683500+: ¥0.24391000+: ¥0.23233000+: ¥0.12071+: ¥0.2683500+: ¥0.24391000+: ¥0.23233000+: ¥0.12070
PMEG2010EA-QZPMEG2010EAPMEG2010EA-QZQ - 20 V, 1 A low VF Schottky barrier diode库存: 300001+: ¥0.2801500+: ¥0.25471000+: ¥0.24253000+: ¥0.12631+: ¥0.2801500+: ¥0.25471000+: ¥0.24253000+: ¥0.12630
PBSS4140T-QVLPBSS4140TPBSS4140T-QVLQ - 40 V, 1 A NPN low VCEsat (BISS) transistor库存: 01+: ¥0.2769500+: ¥0.25171000+: ¥0.23983000+: ¥0.12471+: ¥0.2769500+: ¥0.25171000+: ¥0.23983000+: ¥0.12470
PMH850UPEHPMH850UPEPMH850UPEH30 V, P-channel Trench MOSFET库存: 1200001+: ¥0.2812500+: ¥0.25561000+: ¥0.24353000+: ¥0.12711+: ¥0.2812500+: ¥0.25561000+: ¥0.24353000+: ¥0.1271120000
