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商品编号:
PSMNR58-30YLHX
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简述:
30YLH - N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology
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描述:
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current rated to 380 A, optimized for DC load switch and hot-swap applications.
- 数据手册:
特性
100% avalanche tested at I(AS) = 190 A
Optimized for low RDSon
Low leakage < 1 µA at 25 °C
Low spiking and ringing for low EMI designs
Optimized for 4.5 V gate drive
Copper-clip for low parasitic inductance and resistance
High reliability LFPAK package, qualified to 175 °C
Wave solderable; exposed leads for optimal solder coverage and visual solder inspection
目标应用
Hot swap
e-Fuse
Power OR-ing
DC switch / Load switch
Battery protection
Brushed and BLDC (brushless) motor control
Synchronous rectification in AC-DC and DC-DC applications