PDTD123YT
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PDTD123YT
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商品编号:
PDTD123YT-QR
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简述:
Q - 50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
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描述:
NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTB123YT-Q
- 数据手册:
库存: 0
特性
Built-in bias resistors
Simplifies circuit design
500 mA output current capability
Reduces component count
Reduces pick and place costs
± 10 % resistor ratio tolerance
Qualified according to AEC-Q101 and recommended for use in automotive applications
目标应用
Digital application in automotive and industrial segment
Controlling IC inputs
Cost-saving alternative to BC817-Q series in digital applications
Switching loads
数据手册