PBHV2160Z
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PBHV2160Z
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商品编号:
PBHV2160Z-QX
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简述:
Q - 600 V, 0.1 A NPN high-voltage low VCEsat transistor
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描述:
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV3160Z-Q
- 数据手册:
库存: 0
特性
Low collector-emitter saturation voltage VCEsat
High collector current capability
High collector current gain hFE at high IC
Qualified according to AEC-Q101 and recommended for use in automotive applications
目标应用
Electronic ballast for fluorecent lighting
LED driver for LED chain module
LCD backlighting
HID front lighting
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
数据手册