NT900T12D3M7PZ
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NT900T12D3M7PZ
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商品编号:
NT900T12D3M7PZ
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简述:
1200 V, 900 A Half Bridge IGBT Power Module
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描述:
The NT900T12D3M7P is an Insulated-Gate Bipolar Transistor (IGBT) power module that uses 7th-generation carrier stored trench-gate and field-stop (FS) technology. It is designed for high-voltage, high-frequency industrial power inverter and motor drive applications.
- 数据手册:
库存: 0
特性
- Half-bridge topology with NTC temperature sensor
- Rated voltage and current: 1200 V / 900 A
- Maximum junction temperature: 175 °C
- Short-circuit withstand time: 8 µs
- Solderable auxiliary contacts
- Optimized design for low parasitic inductance
- Low collector-emitter saturation voltage
- Low switching losses
- HV-H3TRB qualified
- Pre-applied thermal interface material
目标应用
- Motor drives
- Renewable energy systems
- Electric vehicle (EV) chargers
- High power converters and inverters
数据手册