NT480T12D3M7PZ
图像仅供参考
请参阅产品规格
NT480T12D3M7PZ
-
商品编号:
NT480T12D3M7PZ
-
简述:
1200 V, 480 A Half Bridge IGBT Power Module
-
描述:
The NT480T12D3M7P is an Insulated-Gate Bipolar Transistor (IGBT) power module that uses 7th-generation carrier stored trench-gate and field-stop (FS) technology. It is designed for high-voltage industrial power inverter and motor drive applications.
- 数据手册:
库存: 0
特性
- Half-bridge topology with NTC temperature sensor
- Rated voltage and current: 1200 V / 480 A
- Maximum junction temperature: 175 °C
- Short-circuit withstand time: 8 µs
- Solderable auxiliary contacts
- Optimized design for low parasitic inductance
- Low collector-emitter saturation voltage
- Low switching losses
- HV-H3TRB qualified
- Pre-applied thermal interface material (TIM)
目标应用
- Motor drives
- Renewable energy systems
- Electric vehicle (EV) chargers
- High power converters and inverters
数据手册