购物车
PXP013
分享
图像仅供参考
请参阅产品规格
- 商品编号:PXP013-30QLJ
- 简述:30QL - 30 V, P-channel Trench MOSFET
- 描述:
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- 数据手册:
库存：99,993,999
- 数量：
- 单价:¥1.3599
- 总价:¥0.0000
价格（包含13%的增值税）
- 数量单价总价
- 1¥1.3599¥1.3599
- 500¥1.2363¥618.1500
- 1000¥1.1774¥1,177.4000
- 3000¥1.1213¥3,363.9000
特性
Logic level compatible
Trench MOSFET technology
MLPAK33 package (3.3 x 3.3 mm footprint)
目标应用
High-side load switch
Battery management
DC-to-DC conversion
Switching circuits
数据手册
- 新品
GAN041-650WSBQ
650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package¥57.7437 - 新品
GAN063-650WSAQ
650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET¥98.3146 - 新品
GAN080-650EBEZ
650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥28.1205 - 新品
GAN140-650EBEZ
650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥19.2121 - 新品
GAN190-650EBEZ
650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥12.2357 - 新品
GAN190-650FBEZ
650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package¥11.4843 - 新品
NGW30T60M3DFQ
600 V, 30 A trench field-stop IGBT with full rated silicon diode¥14.1836 - 新品
PSC1065KQ
650 V, 10 A SiC Schottky diode in TO-220-2 R2P¥10.1964