限量供应
图像仅供参考
请参阅产品规格
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Very fast switching
Low threshold voltage
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Leadless ultra small package: 1.0 × 0.6 × 0.48 mm
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits