购物车
PMBTA92
分享
图像仅供参考
请参阅产品规格
- 商品编号:PMBTA92-QR
- 简述:Q - PNP high-voltage transistor
- 描述:
PNP high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PMBTA42-Q
- 数据手册:
库存：99,939,999
- 数量：
- 单价:¥0.1492
- 总价:¥0.0000
价格（包含13%的增值税）
- 数量单价总价
- 1¥0.1492¥0.1492
- 500¥0.1356¥67.8000
- 1000¥0.1292¥129.2000
- 3000¥0.1230¥369.0000
特性
Low current (max. 100 mA)
High voltage (max. 300 V)
Qualified according to AEC-Q101 and recommended for use in automotive applications
目标应用
Telephony
Professional communication equipment
数据手册
- 新品
GAN041-650WSBQ
650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package¥57.7437 - 新品
GAN063-650WSAQ
650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET¥98.3146 - 新品
GAN080-650EBEZ
650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥28.1205 - 新品
GAN140-650EBEZ
650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥19.2121 - 新品
GAN190-650EBEZ
650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥12.2357 - 新品
GAN190-650FBEZ
650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package¥11.4843 - 新品
NGW30T60M3DFQ
600 V, 30 A trench field-stop IGBT with full rated silicon diode¥14.1836 - 新品
PSC1065KQ
650 V, 10 A SiC Schottky diode in TO-220-2 R2P¥10.1964