购物车
MJD45H11A
分享
图像仅供参考
请参阅产品规格
- 商品编号:MJD45H11AJ
- 批次:2346+
- 简述:80 V, 8 A PNP high power bipolar transistor
- 描述:
PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.
NPN complement: MJD44H11A
- 数据手册:
库存：17,345
- 数量：
- 单价:¥1.4143
- 总价:¥0.0000
价格（包含13%的增值税）
- 数量单价总价
- 1¥1.4143¥1.4143
- 500¥1.2857¥642.8500
- 1000¥1.2245¥1,224.5000
- 3000¥1.1662¥3,498.6000
特性
High thermal power dissipation capability
High energy efficiency due to less heat generation
Electrically similar to popular MJD45H series
Low collector emitter saturation voltage
Fast switching speeds
- AEC-Q101 qualified
目标应用
Power management
Load switch
Linear mode voltage regulator
Constant current drive backlighting application
Motor drive
Relay replacement
数据手册
- 新品
GAN041-650WSBQ
650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package¥54.8978 - 新品
GAN063-650WSAQ
650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET¥93.4692 - 新品
GAN080-650EBEZ
650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥26.7346 - 新品
GAN140-650EBEZ
650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥18.2652 - 新品
GAN190-650EBEZ
650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥11.6326 - 新品
GAN190-650FBEZ
650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package¥10.9183 - 新品
NGW30T60M3DFQ
600 V, 30 A trench field-stop IGBT with full rated silicon diode¥14.1836 - 新品
PSC1065KQ
650 V, 10 A SiC Schottky diode in TO-220-2 R2P¥13.7755