购物车
vp_BC846X_SER
分享
图像仅供参考
请参阅产品规格
- 商品编号:BC846B,215
- 批次:2514+
- 简述:65 V, 100 mA NPN general-purpose transistors
- 描述:
NPN general-purpose transistors in a small SOT23 (TO236AB) Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview Type number
Package
PNP complement
Nexperia
JEDEC
BC846
SOT23
TO-236AB
BC856
BC846A
BC856A
BC846B
BC856B
- 数据手册:
库存：614,700
- 数量：
- 单价:¥0.0633
- 总价:¥0.0000
价格（包含13%的增值税）
- 数量单价总价
- 1¥0.0633¥0.0633
- 500¥0.0576¥28.8000
- 1000¥0.0548¥54.8000
- 3000¥0.0522¥156.6000
特性
General-purpose transistors
SMD plastic package
Two different gain selections
目标应用
General-purpose switching and amplification
数据手册
- 新品
GAN041-650WSBQ
650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package¥54.8978 - 新品
GAN063-650WSAQ
650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET¥93.4692 - 新品
GAN080-650EBEZ
650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥26.7346 - 新品
GAN140-650EBEZ
650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥18.2652 - 新品
GAN190-650EBEZ
650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥11.6326 - 新品
GAN190-650FBEZ
650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package¥10.9183 - 新品
NGW30T60M3DFQ
600 V, 30 A trench field-stop IGBT with full rated silicon diode¥14.1836 - 新品
PSC1065KQ
650 V, 10 A SiC Schottky diode in TO-220-2 R2P¥13.7755