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Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery; s-factor > 1
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C
Wave solderable; exposed leads for optimal visual solder inspection
On-board DC-to-DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Brushed and brushless motor control