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Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Very low threshold voltage for portable applications: VGS(th) = 0.7 V
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Relay driver
High-speed line driver
Level shifter
Power management in battery-driven portables