购物车
PDTD123YT
分享
图像仅供参考
请参阅产品规格
- 商品编号:PDTD123YT,215
- 简述:50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
- 描述:
NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTB123YT
- 数据手册:
库存：99,441,999
- 数量：
- 单价:¥0.1514
- 总价:¥0.0000
价格（包含13%的增值税）
- 数量单价总价
- 1¥0.1514¥0.1514
- 500¥0.1561¥78.0500
特性
Built-in bias resistors
Simplifies circuit design
500 mA output current capability
Reduces component count
Reduces pick and place costs
± 10 % resistor ratio tolerance
目标应用
Digital application in industrial segment
Controlling IC inputs
Cost-saving alternative to BC817 series in digital applications
Switching loads
数据手册
- 新品
GAN041-650WSBQ
650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package¥57.7437 - 新品
GAN063-650WSAQ
650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET¥98.3146 - 新品
GAN080-650EBEZ
650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥28.1205 - 新品
GAN140-650EBEZ
650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥19.2121 - 新品
GAN190-650EBEZ
650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package¥12.2357 - 新品
GAN190-650FBEZ
650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package¥11.4843 - 新品
NGW30T60M3DFQ
600 V, 30 A trench field-stop IGBT with full rated silicon diode¥14.1836 - 新品
PSC1065KQ
650 V, 10 A SiC Schottky diode in TO-220-2 R2P¥10.1964